Reciprocal Space Mapping and Reflectivity Investigations of Epi-Ready InP Substrate
نویسنده
چکیده
InP single crystals are used to the growth of three-component epitaxial layers and superlattices. Triple crystal X-ray diffractometry and reflectometry have been used to determine defects in InP epi-ready wafers caused by the mechanical treatment. Reciprocal space maps around 400 lattice points were separately made for mechanically polished wafers before and after etching treatment. The lattice imperfections have been studied by measuring the diffusion scattering. The surface morphology has been controlled by means of X-ray reflectometry.
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تاریخ انتشار 1999